| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRF150 |
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
84.86K |
ETC [ETC] |
 |
| IRF150 |
40A, 100V, 0.055 Ohm, N-Channel Power MOSFET |
57.97K |
INTERSIL [Intersil Corporation] |
|
| IRF1503 |
AUTOMOTIVE MOSFET |
552.76K |
IRF [International Rectifier] |
|
| IRF150 |
HIGH VOLTAGE POWER MOSFET DIE |
44.9K |
IXYS [IXYS Corporation] |
|
| IRF150SMD |
N-CHANNEL POWER MOSFET |
22.62K |
SEME-LAB [Seme LAB] |
|
| IRF150 |
N-CHANNEL POWER MOSFET |
22.09K |
SEME-LAB [Seme LAB] |
|
| IRF150 |
N-CHANNEL POWER MOSFETS |
210.79K |
SAMSUNG [Samsung semiconductor] |
|
| IRF150-153 |
N-Channel Power MOSFETs, 40 A, 60 V/100 V |
125.37K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF150 |
N-Channel Power MOSFETs, 40 A, 60 V/100 V |
125.37K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF150 |
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A) |
150.48K |
IRF [International Rectifier] |
|
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|
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