型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
IRF830A |
HEXFET Power MOSFET |
141K |
IRF [International Rectifier] |
|
IRF830A |
Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A) |
108K |
VAISH [Vaishali Semiconductor] |
|
IRF830 |
PowerMOS transistor Avalanche energy rated |
58.83K |
PHILIPS [Philips Semiconductors] |
|
IRF830B |
500V N-Channel MOSFET |
888.87K |
FAIRCHILD [Fairchild Semiconductor] |
|
IRF830 |
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET |
56.15K |
INTERSIL [Intersil Corporation] |
|
IRF830AS |
Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A) |
155.1K |
IRF [International Rectifier] |
|
IRF830AL |
Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A) |
155.1K |
IRF [International Rectifier] |
|
IRF830S |
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A) |
175.73K |
IRF [International Rectifier] |
|
IRF830 |
POWER MOSFET |
40.43K |
ETC [ETC] |
|
IRF830 |
N-Channel Power MOSFETs, 4.5 A, 450V/500V |
141.08K |
FAIRCHILD [Fairchild Semiconductor] |
|
IRF830 |
N-CHANNEL ENHANCEMENT MODE |
282.47K |
TRSYS [TRSYS] |
|
IRF830 |
N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET |
92.72K |
STMICROELECTRONICS [STMicroelectronics] |
|
IRF830PBF |
HEXFET Power MOSFET |
876.43K |
IRF [International Rectifier] |
|
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