型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
IRF9Z24 |
P-CHANNEL POWER MOSFETs |
287K |
SAMSUNG [Samsung semiconductor] |
![](image/pdf.gif) |
IRF9Z24S |
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A) |
311.01K |
IRF [International Rectifier] |
![](image/pdf.gif) |
IRF9Z24L |
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A) |
311.01K |
IRF [International Rectifier] |
![](image/pdf.gif) |
IRF9Z24NS |
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) |
168.45K |
IRF [International Rectifier] |
![](image/pdf.gif) |
IRF9Z24NL |
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) |
168.45K |
IRF [International Rectifier] |
![](image/pdf.gif) |
IRF9Z24N |
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) |
109.06K |
IRF [International Rectifier] |
![](image/pdf.gif) |
IRF9Z24 |
POWER MOSFET |
174.81K |
IRF [International Rectifier] |
![](image/pdf.gif) |
|
|