| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| CT60AM18B |
TRANSISTOR | IGBT | N-CHAN | 900V V(BR)CES | 60A I(C) | TO-247VAR |
178.04K |
Powerex Inc |
 |
| CT60AM18F |
TRANSISTOR | IGBT | N-CHAN | 900V V(BR)CES | 60A I(C) | TO-247VAR |
82.94K |
Powerex Inc |
|
| CT60AM20 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 60A I(C) | TO-247VAR |
461.25K |
Mitsubishi Electric & Electronics USA |
|
| CT60AM-18B |
CT60AM-18B Datasheet 73K/MAR.20.03 |
71.65K |
Mitsubishi |
|
| CT60AM-18 |
CT60AM-18F Datasheet 118K/MAR.20.03 |
115.72K |
FMitsubishi |
|
| ct60 |
DIAC (BIDIRECTIONAL DIODE THYRISTOR),70V V(BO) MAX,50UA I(S),DO-204AL |
88482K |
|
|
| CT60AM-18B |
RESONANT INVERTER USE |
43.54K |
MITSUBISHI [Mitsubishi Electric Semiconductor] |
|
| CT60AM-18F |
INSULATED GATE BIPOLAR TRANSISTOR |
23.54K |
POWEREX [Powerex Power Semiconductors] |
|
| CT60AM-18C-AD |
Insulated Gate Bipolar Transistor |
97.54K |
RENESAS [Renesas Technology Corp] |
|
| CT60AM-18C |
Insulated Gate Bipolar Transistor |
97.54K |
RENESAS [Renesas Technology Corp] |
|
|
|
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