| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRF130 |
N-CHANNEL POWER MOSFETS |
211.72K |
SAMSUNG [Samsung semiconductor] |
 |
| IRF130SMD |
N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
22.69K |
SEME-LAB [Seme LAB] |
|
| IRF130 |
N-CHANNEL POWER MOSFET |
22.11K |
SEME-LAB [Seme LAB] |
|
| IRF130-133 |
N-Channel Power MOSFETs, 20 A, 60-100 V |
180.59K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF130 |
N-Channel Power MOSFETs, 20 A, 60-100 V |
180.59K |
FAIRCHILD [Fairchild Semiconductor] |
|
| IRF1302 |
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) |
523.54K |
IRF [International Rectifier] |
|
| IRF1302S |
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) |
229.09K |
IRF [International Rectifier] |
|
| IRF1302L |
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) |
229.09K |
IRF [International Rectifier] |
|
| IRF130 |
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A) |
147.29K |
IRF [International Rectifier] |
|
| IRF130 |
14A, 100V, 0.160 Ohm, N-Channel Power MOSFET |
56.56K |
INTERSIL [Intersil Corporation] |
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