| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRF640-D |
OBSOLETE - Power Field Effect Transistor |
108K |
ON SEMICONDUCTOR |
 |
| IRF640L |
HEXFET? Power MOSFET |
234208K |
|
|
| IRF640S |
HEXFET? Power MOSFET |
234208K |
|
|
| IRF640N |
HEXFET? Power MOSFET |
159136K |
|
|
| IRF640 |
HEXFET? Power MOSFET |
182504K |
|
|
| IRF640S |
N-channel TrenchMOS TM transistor |
99459K |
Philips |
|
| IRF640 |
N-channel TrenchMOS TM transistor |
99459K |
Philips |
|
| IRF640 |
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
62844K |
Intersil |
|
| IRF640S |
N - CHANNEL 200V - 0.150 - 18A TO-263 MESH OVERLAY TM MOSFET |
86255K |
STMicro |
|
| IRF640FP |
N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY TM MOSFET |
109544K |
STMicro |
|
| IRF640 |
N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY TM MOSFET |
109544K |
STMicro |
|
| IRF640B |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-220AB |
916.61K |
Fairchild Semiconductor Corp |
|
| IRF640NS |
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A) |
155K |
IRF [International Rectifier] |
|
| IRF640NL |
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A) |
155K |
IRF [International Rectifier] |
|
|
|
|
