| 型号 |
简要描述 |
文件大小 |
厂家 |
PDF |
| IRG4PH40UD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) |
220.5K |
IRF [International Rectifier] |
 |
| IRG4PH40UD2PBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
268.07K |
IRF [International Rectifier] |
|
| IRG4PH40UD2-EP |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
231.09K |
IRF [International Rectifier] |
|
| IRG4PH40UD2-E |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
251.63K |
IRF [International Rectifier] |
|
| IRG4PH40UD2 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
248.84K |
IRF [International Rectifier] |
|
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