半导体 组
7 jan-10-1997
bsm 20 gd 60 dn2
典型值 切换 时间
i = f (i
C
) ,
inductive 加载 , t
j
= 125°c
par.:
V
CE
= 300 v,
V
GE
= ± 15 v,
R
G
= 47
Ω
0 5 10 15 20 25 30 35 40 一个 50
I
C
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
典型值 切换 时间
t = f (r
G
) ,
inductive 加载 ,
T
j
= 125°c
par.:
V
CE
= 300 v,
V
GE
= ± 15 v,
I
C
= 20 一个
0 20 40 60 80
Ω
120
R
G
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
典型值 切换 losses
e = f (i
C
) ,
inductive 加载 ,
T
j
= 125°c
par.:
V
CE
= 300 v,
V
GE
= ± 15 v,
R
G
= 47
Ω
0 5 10 15 20 25 30 35 40 一个 50
I
C
0.0
0.5
1.0
1.5
2.0
mWs
3.0
E
Eon
Eoff
典型值 切换 losses
e = f (r
G
) ,
inductive 加载
,
T
j
= 125°c
par.:
V
CE
= 300v,
V
GE
= ± 15 v,
I
C
= 20 一个
0 20 40 60 80
Ω
120
R
G
0.0
0.5
1.0
1.5
2.0
mWs
3.0
E
Eon
Eoff