半导体 组
7 三月-28-1996
bsm 150 gb 120 dn2
典型值 切换 时间
i = f (i
C
) ,
inductive 加载 , t
j
= 125°c
par.:
V
CE
= 600 v,
V
GE
= ± 15 v,
R
G
= 5.6
Ω
0 50 100 150 200 250 300 一个 400
I
C
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
典型值 切换 时间
t = f (r
G
) ,
inductive 加载 ,
T
j
= 125°c
par.:
V
CE
= 600 v,
V
GE
= ± 15 v,
I
C
= 150 一个
0 10 20 30 40
Ω
60
R
G
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
典型值 切换 losses
e = f (i
C
) ,
inductive 加载 ,
T
j
= 125°c
par.:
V
CE
= 600 v,
V
GE
= ± 15 v,
R
G
= 5.6
Ω
0 50 100 150 200 250 300 一个 400
I
C
0
20
40
60
80
mWs
120
E
Eon
Eoff
典型值 切换 losses
e = f (r
G
) ,
inductive 加载
,
T
j
= 125°c
par.:
V
CE
= 600v,
V
GE
= ± 15 v,
I
C
= 150 一个
0 10 20 30 40
Ω
60
R
G
0
20
40
60
80
mWs
120
E
Eon
Eoff