半导体 组
7 8月-01-1996
bsm 150 gb 170 dn2
典型值 切换 时间
i = f (i
C
) ,
inductive 加载 , t
j
= 125°c
par.:
V
CE
= 1200 v,
V
GE
= ± 15 v,
R
G
= 10
Ω
0 50 100 150 200 250 一个 350
I
C
1
10
2
10
3
10
4
10
ns
t
tdoff
tr
tf
tdon
典型值 切换 时间
t = f (r
G
) ,
inductive 加载 ,
T
j
= 125°c
par.:
V
CE
= 1200 v,
V
GE
= ± 15 v,
I
C
= 150 一个
0 10 20 30 40
Ω
60
R
G
1
10
2
10
3
10
4
10
ns
t
tdoff
tr
tdon
tf
典型值 切换 losses
e = f (i
C
) ,
inductive 加载 ,
T
j
= 125°c
par.:
V
CE
= 1200 v,
V
GE
= ± 15 v,
R
G
= 10
Ω
0 50 100 150 200 250 一个 350
I
C
0
50
100
150
200
250
300
mWs
400
E
Eon
Eoff
典型值 切换 losses
e = f (r
G
) ,
inductive 加载
,
T
j
= 125°c
par.:
V
CE
= 1200 v,
V
GE
= ± 15 v,
I
C
= 150 一个
0 10 20 30 40
Ω
60
R
G
0
50
100
150
200
250
300
mWs
400
E
Eon
Eoff