www.德州仪器.com
ELECTRICALCHARACTERISTICS
TAS5142
SLES126B–DECEMBER2004–REVISEDMAY2005
R
L
=4
Ω
,f
PWM
=384khz,unlessotherwisenoted.allperformanceisinaccordancewithrecommendedoperatingconditions
unlessotherwisespecified.
TAS5142
PARAMETERTESTCONDITIONSUNIT
MINTYPMAX
InternalVoltageRegulatorandCurrentConsumption
voltageregulator,onlyusedasa
vregvdd=12v33.33.6v
referencenode
运行,50%dutycycle717
IVDDVDDsupplycurrentmA
空闲,resetmode611
50%dutycycle516
igvdd_xgatesupplycurrentperhalf-bridgema
resetmode0.31
50%dutycycle,withoutoutputfilterorload1525ma
ipvdd_xhalf-bridgeidlecurrent
resetmode,noswitching725
µ
一个
OutputStageMOSFETs
T
J
=25°c,includesmetallizationresistance,
R
dson,ls
流-至-sourceresistance,ls140155m
Ω
GVDD=12V
T
J
=25°c,includesmetallizationresistance,
R
dson,hs
流-至-sourceresistance,hs140155m
Ω
GVDD=12V
i/oprotection
undervoltageprotectionlimit,
V
uvp,g
9.8v
gvdd_x
V
uvp,hyst
(1)
250mV
OTW
(1)
Overtemperaturewarning115125135°C
Temperaturedropneededbelow
OTW
HYST
(1)
otwtemp.forotwtobeinactive25°c
aftertheOTWevent
OTE
(1)
Overtemperatureerror145155165°C
ote-
ote-otwdifferential30°c
OTW
差别的
(1)
AreseteventmustoccurforSDto
OTE
HYST
(1)
25°C
bereleasedfollowinganoteevent.
OLPCOverloadprotectioncounterF
PWM
=384khz1.25ms
resistor—programmable,高-终止,
I
OC
overcurrentlimitprotection7.99.711.4a
R
OCP
=18k
Ω
I
OCT
Overcurrentresponsetime210ns
R
OCP
OCprogrammingresistorrangeResistortolerance=5%1869k
Ω
ConnectedwhenRESETisactivetoprovide
internalpulldownresistorattheout-
R
PD
bootstrapcapacitorcharge.notusedinse2.5k
Ω
putofeachhalf-桥
模式
StaticDigitalSpecifications
V
IH
高-levelinputvoltage2v
pwm_一个,pwm_b,pwm_c,pwm_d,m1,
m2,m3,重置_ab,重置_cd
V
IL
低-levelinputvoltage0.8v
LeakageInputleakagecurrent–1010
µ
一个
otw/关闭(sd)
internalpullupresistance,otwto
R
int_pu
202632k
Ω
vreg,sdtovreg
internalpullupresistor33.33.6
V
OH
高-leveloutputvoltagev
externalpullupof4.7k
Ω
to5v4.55
V
OL
低-leveloutputvoltagei
O
=4ma0.20.4v
fanoutdevicefanoutotw,sdnoexternalpullup30devices
(1)specifiedbydesign
10