©2002 仙童 半导体 公司 rev. b, 二月 2002
isl9n306ap3/isl9n306as3st
额外的刺激 热的 模型
rev 将 2001
ISL9N306AT
ctherm1 th 6 2.7e-4
ctherm2 6 5 3.9e-3
ctherm3 5 4 4.2e-3
ctherm4 4 3 4.8e-3
ctherm5 3 2 1.9e-2
ctherm6 2 tl 5.9e-2
rtherm1 th 6 1.0e-3
rtherm2 6 5 4.8e-3
rtherm3 5 4 4.5e-2
rtherm4 4 3 2.6e-1
rtherm5 3 2 3.1e-1
rtherm6 2 tl 3.4e-1
saber 热的 模型
saber 热的 模型 isl9n306at
template 热的_模型 th tl
热的_c th, tl
{
ctherm.ctherm1 th 6 = 2.7e-4
ctherm.ctherm2 6 5 = 3.9e-3
ctherm.ctherm3 5 4 = 4.2e-3
ctherm.ctherm4 4 3 = 4.8e-3
ctherm.ctherm5 3 2 = 1.9e-2
ctherm.ctherm6 2 tl = 5.9e-2
rtherm.rtherm1 th 6 = 1.0e-3
rtherm.rtherm2 6 5 = 4.8e-3
rtherm.rtherm3 5 4 = 4.5e-2
rtherm.rtherm4 4 3 = 2.6e-1
rtherm.rtherm5 3 2 = 3.1e-1
rtherm.rtherm6 2 tl = 3.4e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
接合面
情况